Evaluation of Hydrogen-Induced Blistering of Mo/Si Multilayers with a Capping Layer

Mo/Si multilayer mirrors are used for extreme ultraviolet (EUV) lithography. The formation of hydrogen-induced blisters in the is a problem that reduces reflectance mirror. To evaluate blister-resistance EUV mirrors, blister processes multilayers with capping layer were investigated using high-frequency hydrogen plasma system as ion source under varying exposure conditions. As result, it was observed by low-energy irradiation about 10 eV increases blister-occupied area, depending on amount dose. Furthermore, sample heated to promote diffusion atoms, and activation energy examined Arrhenius plot dose required respect heating temperature. analysis showed when flux known, time can be predicted.